issue 1 - june 2004 summary v (br)dss =30v; r ds(on) =0.11;i d =3.2a description this new generation of high density mosfets from zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? sot23-6 package applications ? dc - dc converters ? power management functions ? disconnect switches ? motor control ordering information device reel size (inches) tape width (mm) quantity per reel zxm62n03e6ta 7 8mm embossed 3000 units ZXM62N03E6TC 13 8mm embossed 10000 units device marking ? 2n03 30v n-channel enhancement mode mosfet sot23-6 zxm62n03e6 1 top view not recommended for new design please use zxmn3a01e6ta
issue 1 - june 2004 zxm62n03e6 absolute maximum ratings parameter symbol limit unit drain-source voltage v dss 30 v gate source voltage v gs 20 v continuous drain current (v gs =10v; t a =25c)(b) (v gs =10v; t a =70c)(b) i d 3.2 2.6 a pulsed drain current (c) i dm 18 a continuous source current (body diode) (b) i s 2.1 a pulsed source current (body diode) i sm 18 a power dissipation at t a =25c (a) linear derating factor p d 1.1 8.8 w mw/c power dissipation at t a =25c (b) linear derating factor p d 1.7 13.6 w mw/c operating and storage temperature range t j :t stg -55 to +150 c thermal resistance parameter symbol v alue unit junction to ambient (a) r ja 113 c/w junction to ambient (b) r ja 73 c/w notes: (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t5 secs. (c) repetitive rating - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. 2 not recommended for new design please use zxmn3a01e6ta
issue 1 - june 2004 zxm62n03e6 3 not recommended for new design please use zxmn3a01e6ta
issue 1 - june 2004 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss 30 v i d =250 a, v gs =0v zero gate voltage drain current i dss 1 a v ds =30v, v gs =0v gate-body leakage i gss 100 na v gs = ? 20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.11 0.15 ? ? v gs =10v, i d =2.2a v gs =4.5v, i d =1.1a forward transconductance g fs 1.1 s v ds =10v,i d =1.1a dynamic (3) input capacitance c iss 380 pf v ds =25v,v gs =0v, f=1mhz output capacitance c oss 90 pf reverse transfer capacitance c rss 30 pf switching (2) (3) turn-on delay time t d(on) 2.9 ns v dd =15v, i d =2.2a r g =6.0? ,r d =6.7? (refer to test circuit) rise time t r 5.6 ns turn-off delay time t d(off) 11.7 ns fall time t f 6.4 ns total gate charge q g 9.6 nc v ds =24v,v gs =10v, i d =2.2a (refer to test circuit) gate-source charge q gs 1.7 nc gate drain charge q gd 2.8 nc source-drain diode diode forward voltage (1) v sd 0.95 v t j =25c, i s =2.2a, v gs =0v reverse recovery time (3) t rr 18.8 ns t j =25c, i f =2.2a, di/dt= 100a/ s reverse recovery charge (3) q rr 11.4 nc (1) measured under pulsed conditions. width=300s. duty cycle ?2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing. zxm62n03e6 4 not recommended for new design please use zxmn3a01e6ta
issue 1 - june 2004 zxm62n03e6 5 not recommended for new design please use zxmn3a01e6ta
issue 1 - june 2004 zxm62n03e6 6 not recommended for new design please use zxmn3a01e6ta
issue 1 - june 2004 7 zxm62n03e6 not recommended for new design please use zxmn3a01e6ta
issue 1 - june 2004 package dimensions a1 2 l datum a a c e aa2 e1 d b e e1 pad layout details dim millimeters inches min max min max a 0.90 1.45 0.35 0.057 a1 0.00 0.15 0 0.006 a2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 c 0.09 0.20 0.0035 0.008 d 2.80 3.00 0.110 0.118 e 2.60 3.00 0.102 0.118 e1 1.50 1.75 0.059 0.069 8 zxm62n03e6 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex plc lansdowne road, chadderton oldham, ol9 9ty united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2004 not recommended for new design please use zxmn3a01e6ta
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